学术发表
黑体姓名为导师
学术专著
全书:
1.
Novel Optical Technologies for
Nanofabrication
Qian Liu, Xuanming Duan, Changsi Peng, (ISBN: 978-3-642-40386-6,
ISBN 978-3-642-40387-3 (eBook), DOI 10.1007/978-3-642-40387-3), Publisher:
Springer (2013.12)
章节:
2.
Laser Interference Lithography
C. Tan, C.S. Peng,
Ainara Rodriguez, M. Pessa, S. M. Olaizola, V. N. Petryakov, Yu. K. Verevkin,
J. Zhang, Z. Wang, T. Berthou, S. Tisserand, “Advances
in Nanotechnology, 4” Chapter 6 (ISBN: 978-1-61668-618-5),
ed. Zacharie Bartul and Jérôme Trenor, Publisher Nova
Science Publishers, (2010)
3. Dilute nitrides: the material properties and laser performance
C.S. Peng and M. Pessa. “Nitrides and dilute nitrides: Growth,
characterization and devices” Chapter 9 (ISBN: 978-81-7895-250-5), ed. J. Miguel-Sanchez,
Publisher Transworld Research Network, pp. 229-264 (2007)
4. GaInNAs
Quantum Well Lasers
W. Li, M. Pessa, T. Jouhti, C.S. Peng, E.-M. Pavelescu, chapter in Encyclopedia of Nanoscience
and Nanotechnology, 3, edited by
H.S.Nalwa, American
Scientific Publishers,
pp. 719-730 (2004)
5. Extending the
emission wavelength of GaInNAs/GaAs quantum well lasers beyond 1300 nm
W. Li, J. Konttinen, T. Jouhti, C.S.
Peng, E.-M. Pavelescu, M. Suominen, M. Pessa, An article in the book “Advanced
Nanomaterials and Nanodevices” published by the Institute of Physics
Publishing. IOP Publishing Ltd. 2003. ISBN: 0750309652, pp. 251-260 (2003)
专利
授权专利:
1. 一种三维多孔石墨烯超薄膜及其制备方法
王艳艳，彭长四，陈林森，宋加加，ZL：201810532912.1 (申请2018.05.30，授权2021.02.09).
2. 原位无损剥离量子点的方法
石震武，缪力力，杨琳韵，杨新宁，彭长四，201810556681.8（申请2018.06.01，授权2020.09.08）.
3. 磁贴式LED平板灯
彭长四，方宗豹，张恒，ZL 201720004751.X（申请2017.01.04；授权2017.06.05）.
4. 一种LED梳妆灯
彭长四，方宗豹，张恒，ZL 201720003665.7（申请2017.01.04；授权2017.06.13）.
5. 一种基于三维多孔石墨烯超薄膜的垂直响应型气体传感器
王艳艳，彭长四，陈林森，ZL 201621352613.2（申请2016.12.11；授权2017.08.01）.
6. 一种三维多孔石墨烯超薄膜气体传感器及其制备方法
王艳艳，彭长四，陈林森，宋加加，ZL 201610959549.2（受理2016.10.27；授权2018.07.06）.
7. 构建高沾附性超疏水表面的方法
石震武，吴竹慧，张锋，徐成云，彭长四，ZL 201610551383.0（受理2016.07.14；授权2018.05.11）.
8. 一种触控模组
彭长四，ZL 201620146494（受理2016.02.26；授权2016.09.07）.
9. 一种油水分离器件的制备方法
彭长四，张锋，徐成云，吴竹慧，ZL 201610023802.3（申请2016.07.14；授权2018.05.08）.
10. 一种自清洁光栅玻璃的制备方法
王艳艳，彭长四，浦东林，戎晨，李权，ZL 201510259253.5（申请2015.05.20；授权2017.05.24）.
11. 一种基于还原氧化石墨烯的气体传感器及其制备方法
王艳艳，彭长四，陈林森，张锋，元磊，ZL 201310178984.8（申请2013.05.15；授权2015.07.15）.
12. 一种基于还原氧化石墨烯的气体传感器及其制备方法
王艳艳，彭长四，陈林森，顾小勇，刘维萍，ZL 201210390063.3（申请2012.10.15；授权2014.07.16）.
13. 基于石墨烯/聚苯胺杂化材料的气体传感器及其制备方法
王艳艳，彭长四，陈林森，张伟，ZL 201210390062.9（申请2012.10.15；授权2014.07.16）.
14. 背光照明装置及液晶显示装置
张伟，彭长四，顾小勇，刘维萍，王艳艳，张锋，元磊，ZL 201210058173.X（申请2012.03.07；授权2014.07.16）.
15. 一种激光干涉光刻系统
彭长四，董晓轩，张伟，顾小勇，周云，刘维萍，ZL 201110178877.6（申请2011.06.29；授权2014.05.28）
16. 一种量子点材料的制作装置及制作方法
彭长四
中国：ZL 201110224270.7（申请2011.08.05；授权2015.07.15）;
PCT: PCT/CN2012/078013 (2012.07.02)；
美国：US 8,969,185 B2（申请2014.01.17；授权2015.03.03）;
欧盟：EP 2 741 315 B1 (授权2019.04.24)（申请号12821709.8-1103，2014.01.17）.
17.
Sistema de litografia por
interferencia de laser (Spanish)
Yu.K. Verevkin, V.N. Petrykov, S.M. Olaizola, A.R. Gonzalez, I.A Olaizola, C.S.
Peng, C. Tan, M. Pessa, Spain patent, No. 08775425.5-1226. PCT/ES2008000397
专利受理:
18. 一种超疏水可分离柔性薄膜及其制备方法
王艳艳，徐志勇，刘署，彭长四，202111266633.3（2021.10.28）.
19. 一种胶黏剂复合耐磨超疏水涂层及其制备方法
王艳艳，徐志勇，唐兴杰，彭长四，202111265341.8（2021.10.28）.
20. 一种PDMS可修复超疏水涂层及其制备方法
王艳艳，徐志勇，彭长四，202111266639.0（2021.10.28）.
21. 一种增益耦合分布反馈式半导体激光器及其制作方法
彭长四，石震武，耿彪，杨新宁，缪力力，庄思怡，祁秋月，202110818091.X（2021.07.20）.
22. 一种石墨烯复合材料及其传感器与应用
王艳艳，吴哲昆，杨成，张展搏，彭长四，2202110729739.6（2021.06.30）.
23. 光刻装置及光刻方法
彭长四，刘晟，高雅琨，石震武，202011568963.3（2020.12.25）.
24. PDMS/C超疏水复合薄膜及其制备方法
石震武，徐成云，张锋，吴竹慧，彭长四，201810607024.1（2018.06.13）.
25. 一种基于MBE设备原位低温获得大尺寸Ga滴的方法
石震武，杨新宁，杨琳韵，缪力力，陈晨，霍大云，邓长威，彭长四，20181523864.X（2018.05.28）.
26. 一种超疏水膜及其制备方法
王艳艳，顾亮，张小兴，董磊，彭长四，201810298774（2018.04.03）
27. 图形化生长量子点的方法
石震武，杨琳韵，霍大云，邓长威，陈晨，彭长四，201710560071.0（2017.07.11）.
28. 超疏水超亲油过滤膜及其制备方法和使用
石震武，张锋，吴竹慧，徐成云，彭长四，201710082404.3 (2017.02.16).
29. 基于三维多孔石墨烯超薄膜的垂直响应型气体传感器及其制备方法
王艳艳，彭长四，陈林森，201611135425.9 (2016.12.11).
30. 一种多孔石墨烯气敏传感器及其制备方法
王艳艳，彭长四，陈林森，宋加加，201610959550.5 (2016.10.27).
31. 一种透明憎水光栅玻璃及其制备方法
王艳艳，彭长四，申溯，李权，戎晨，201510259433.3 (2015.05.20).
32. 一种基于还原氧化石墨烯的气敏传感器及其制备方法
王艳艳，彭长四，刘艳花，陈林森，李权，201410680689.2 (2013.12.12).
33. 基于碳纳米管-聚吡咯复合网络结构气敏传感器的制备方法
王艳艳，彭长四，刘艳花，霍大云，张先营，201310269209.3 (2013.06.28).
34. 氧化石墨烯薄膜立式微纳结构气敏传感器及其制备方法
王艳艳，彭长四，陈林森，张锋，201310136507.5 (2013.04.18).
同行评审学术论文:
杂志论文:
第一作者:
1.
Nano Fabrication by Laser Interference
C.S. Peng, C.
Tan, W. Zhang, X.-Y. Gu, and
W.-P. Liu, International Journal of Nanomanufacturing. 8
(3), pp. 212-220, (2012)
2. Mechanism of Photoluminescence Blue
Shift in InGaAsN/GaAs Quantum Wells during Annealing
C.S. Peng, H.F. Liu, J. Konttinen, M. Pessa, J. Gryst
Growth, 278, pp.259-263 (2005)
3. Wet
oxidation for detecting surface defect pits of AlGaAs related semiconductors
C.S. Peng, J. Konttinen, T. Jouhti, H.F. Liu, M. Pessa, J. Gryst Growth 274, pp. 138-143 (2005)
4. GaAs-based InGaAsN Lasers
Changsi Peng, Tomi Jouhti, Janne Konttinen, Markus
Pessa, Bulletin of the American Physical Society (American Physical Society),
2005/3/22.
5.
High-performance singlemode InGaNAs/GaAs laser
C.S. Peng, N. Laine, J.Konttinen, S.Karirinne, T.Jouhti,
M.Pessa, IEE
Electronics. Lett. 40 (10), pp. 604-605 (2004)
6.
InGaAsN/GaAs lasers Performance on Thermal Annealing
C.S. Peng, H.F. Liu, J. Konttinen, S. Karirinne, T.Jouhti,
M. Pessa, Physica Scripta, T114, pp. 159-160 (2004)
7.
A study and
control of lattice sites of N and In/Ga interdiffusion in dilute nitride
quantum wells
C.S. Peng, W. Li, T. Jouhti, E.-M. Pavelescu, M. Pessa, J. Cryst. Growth
251, pp. 378-382 (2003)
8.
Diffusion at the interfaces of
InGaNAs/GaAs quantum wells
C.S. Peng, E.-M. Pavelescu, T. Jouhti, J. Konttinen, W. Li, M. Pessa, Solid State
Electronics 47/3 pp. 431-435 (2003)
9.
A new method to suppress the
In diffusion of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
C.S. Peng, E.-M. Pavelescu, T. Jouhti, J. Konttinen, W. Li, M. Pessa, Thin Solid Films
428 pp.176-180 (2003)
10.
Suppression of interfacial
atomic interdiffusion in GaInNAs/GaAs heterostructures grown by molecular beam
epitaxy
C.S. Peng, E.-M. Pavelescu, T. Jouhti, J. Konttinen, W. Li, M. Pessa, Appl. Phys. Lett. 80 (25) pp.
4720-4722 (2002)
11.
1.32-um GaInNAs / GaAs Laser
With a Low Thereshold Current Density
C.S. Peng, T. Jouhti, P. Laukkanen, E.-M. Pavelescu, J. Konttinen, W.
Li, M. Pessa, IEEE
Photon.Tech. Lett., 14 (3), pp. 275-277 (2002)
12.
Study of Ge0.96Si0.04
epilayers grown on Si (001)at high temperature
C.S. Peng,
H.Kawanami, Y.K.Li, G.H.Li, Q.Huang, and J.M.Zhou, J.
Crystal Growth 227/228 pp. 786-790 (2001)
13.
The formation of dislocations in the
interface of GeSi/low-temperature Si buffer grown on Si (001)
C.S. Peng, Y.K.Li,
Q.Huang, and J.M.Zhou J. Crystal Growth 227/228 pp.
740-743 (2001)
14.
Relaxed GeSi alloy grown on
low-temperature buffers by MBE
Chang-si Peng, Qi Huang, Junming Zhou, Yi H Zhang, CH Tung, TT
Sheng, Jian Wang, Silicon-based Optoelectronics, 3630, pp. 231-237 (1999.3.19)
15.
Strain relaxation of GeSi
alloy with low dislocation density grown on low-temperature Si buffers
C.S. Peng, H.Chen, Z.Y.Zhao, J.H.Li, D.Y.Dai,
Q.Huang, J.M.Zhou, Y.H.Zhang, C.H.Tung, T.T.Sheng, J.Wang, J. Crystal Growth
201/202 pp. 530-533 (1999)
16.
Relaxed Ge0.9Si0.1
alloy layers with low threading dislocation densities grown on low-temperature
Si buffers
C.S.
Peng, Z.Y.Zhao, H.Chen, J.H.Li, Y.K.Li, L.W.Guo, D.Y.Dai, Q.Huang,
J.M. Zhou, Y.H.Zhang, T.T.Sheng and C.H.Tung, Appl. Phys. Lett. 72 pp.
3160-3162 (1998)
17.
New optical properties of Ge
self-organized quantum dots
C.S.
Peng, Q.Huang, Y.H.Zhang, W.Q.Cheng, T.T.Sheng, C.H.Tung and J.M.Zhou,
Thin Solid Films 323 pp. 174-177 (1998)
18.
Optical properties of Ge
self-organized quantum dots in Si
C.S.
Peng, Q.Huang, W.Q.Cheng, J.M.Zhou, Y.H.Zhang, T.T.Sheng and C.H.Tung,
Phys. Rev. B 57 pp. 8805-8808 (1998)
19.
Improvement of Ge
self-organized quantum dots by use of Sb surfactant
C.S.
Peng, Q.Huang, W.Q.Cheng, J.M.Zhou, Y.H.Zhang, T.T.Sheng and C.H.Tung,
Appl. Phys. Lett. 72 pp. 2541-2543 (1998)
导师指导:
20. Enable a Facile
Size Re‑distribution of MBE‑Grown Ga‑Droplets via In Situ Pulsed Laser Shooting
Biao Geng, Zhenwu Shi, Chen Chen, Wei Zhang, Linyun Yang, Changwei Deng,
Xinning Yang, Lili Miao and Changsi Peng*, Nanoscale Research Letters, 16:126
(2021) https://doi.org/10.1186/s11671-021-03583-2.
21. Synthesis of Cu2O-modifified
reduced graphene oxide for NO2 sensors
Manman Huang, Yanyan Wang, Shuyang Ying, Zhekun Wu, Weixiao Liu, Da Chen, Changsi
Peng, Sensors, 21, 1958 (2021).
22. Fabrication of
rGO/cuprous oxide nanocomposites for gas sensing
Zhekun Wu, Yanyan Wang, Shuyang Ying, Manman Huang, Changsi Peng, Earth and
Environmental Science, 706, 012024 (2021).
23. Gas sensing
properties of 3D graphene nanotubes (GNT)@ZnO at room temperature
Lei Dong, Yanyan Wang, Zhekun Wu, Weixiao Liu, Shuyang Ying, Manman Huang, Changsi
Peng, Earth and Environmental Science, 446, 022032, (2020). https://doi.org/10.1088/1755-1315/446/2/022032.
24. Preparation of
copper nanowires conductive films by using cuprous oxide nanowire as template
Weixiao Liu, Yanyan Wang, Lei Dong, Manman Huang, Shuyang Ying, Changsi Peng, Earth
and Environmental Science, 446, 022027, (2020). https://doi.org/10.1088/1755-1315/446/2/022027.
25.
Gas sensors
based on assembled porous graphene multilayer frameworks for DMMP detection
Yanyan Wang, Ming Yang, Weixiao Liu, Lei Dong, Da
Chen, Changsi Peng, Journal
of Materials Chemistry C, 7, 9248 (2019).
26.
Gas sensors
based on chemically reduced holey graphene oxide thin films
Ming Yang, Yanyan Wang, Lei Dong, Zhiyong Xu,
Yanhua Liu, Nantao Hu, Eric Siu-Wai Kong, Jiang Zhao, Changsi Peng, Nanoscale Research Letters, 14, 218 (2019).
27.
Polymer
Foam-Supported Chemically Reduced Graphene Oxide Conductive Networks for Gas
Sensing
J Song, Y Wang∗, F Zhang, Y Ye, Y Liu, X Zhou, L Chen, Changsi Peng, J. Nanosci. Nanotechnol., 18(4), 2965-70 (2018).
28.
Self-fibering
growth in the soot-templated CVD coating of silica on mesh for efficient
oil/water separation
Feng Zhang, Zhenwu Shi, Chengyun Xu, Dayun Huo, Wei
Zhang, Changsi Peng,
Materials & Design, 154 pp.370-377 (2018.9.15)
29.
In situ
lift-off of InAs quantum dots by pulsed laser irradiation
Changwei Deng, Zhenwu Shi, Linyun Yang, Wei Zhang,
Chen Chen, Lili Miao, Xinning Yang, Chinhua Wang, Linsen Chen, and Changsi Peng, Appl. Phys. Lett.
113, 083111 (2018).
30.
Polymer
Foam-Supported Chemically Reduced Graphene Oxide Conductive Networks for Gas
Sensing
Jiajia Song, Yanyan Wang, Feng Zhang, Yan Ye,
Yanhua Liu, Xiaohong Zhou, Linsen Chen, Changsi
Peng, Journal of nanoscience and nanotechnology, 18 (4) pp.2965-2970
(2018.4.1)
31.
In-situ laser
nano-patterning for ordered InAs/GaAs(001) quantum dot growth
Wei Zhang, Zhenwu Shi, Dayun Huo, Xiaoxiang Guo,
Feng Zhang, Linsen Chen, Qinhua Wang, Baoshun Zhang, and Changsi Peng, Appl. Phys. Lett. 112, 153108 (2018); doi: 10.1063/1.5016096.
32.
分子束外延原位脉冲激光驱动金属 Ga-droplet 迁移的实现和研究
Implementation of Ga-droplet migration by in-situ
pulsed laser with molecular beam epitaxy
D. Huo, Z. Shi, C. Xu, C. Deng, C. Chen, W. Zhang, C.S. Peng, 科学通报(Chinese Science
Bulletin), 62(28) pp.3379-3384 (2017).
33.
Improvement of Properties of GaAs-based
Dilute Nitrides by Beryllium Doping
HUO Da-yun, SHI Zhen-wu, XU Chao, DENG Chang-wei, CHEN Chen, CHEN
Lin-sen, WANG Wen-xin, PENG Chang-si,
Chn J Luminescence, 38(8) pp.1056-62 (2017).
34.
InGaAs/AlGaAs-量子阱红外探测器中势垒生长温度的研究
霍大云，石震武，张伟，彭长四，物理学报, 66(6) (2017) 068501.
35.
Porous superhydrophobic and
superoleophilic surfaces prepared by template assisted chemical vapor
deposition
Feng Zhang , Zhenwu Shi, Linsen Chen, Yingjie Jiang, Chengyun Xu, Zhuhui
Wu, Yanyan Wang, Changsi Peng,
Surface and Coatings Technology, 315C (2017) 385-390.
36.
Fabrication of transparent
superhydrophobic glass with fibered-silica network
Feng Zhang, Zhenwu Shi, Yingjie Jiang, Chengyun Xu, Zhuhui Wu, Yanyan
Wang, Changsi Peng, Applied Surface Science, 407 (2017) 526-531.
37.
Gas sensors based on layer-by-layer
assembled graphene oxide and reduced graphene oxide
Jiajia Song, Yanyan Wang*, Ming Yang, Feng Zhang, Yan Ye, Yanhua Liu,
Linsen Chen, Changsi Peng, Advances in Engineering Research, 103 (2016)
370-375.
38.
Facile assembly of graphene and titania on
micro-structured substrates for superhydrophobic surfaces
Quan Li, Yanyan Wang, Chen Rong, Feng Zhang, Yanhua Liu, Linsen Chen,
Qinhua Wang, Changsi Peng,
Ceramics International, 42 (2), (2016) 2829-2835.
39.
Effects of
in-situ surface modification by pulsed laser on InAs/GaAs (001) quantum dot
growth
W. Zhang, Z. Shi, D. Huo, X. Guo, C.S.
Peng, Acta Physica Sinica, 65(11) (2016) 117801.
40.
Periodic nanostructures produced on GaAs
surface by UV pulsed laser interference (DOI: 10.1016/j.apsusc.2015.11.105),
Wei Zhang, Dayun Huo, Xiaoxiang Guo, Chen Rong, Zhenwu Shi, Changsi Peng, Applied Surface
Science, 360 (2016) 999-1002.
41.
Ammonia gas sensors based on chemically
reduced graphene oxide sheets self-assembled on Au electrodes
Yanyan Wang, Liling Zhang, Nantao Hu, Ying Wang, Yafei Zhang, Zhihua
Zhou, Yanhua Liu, Su Shen, Changsi
Peng, Nanoscale Research Letters, 9(1) (2014) 251.
42.
Gas sensors based on deposited
single-walled carbon nanotubes-polypyrrole networks for ammonia detection
Yanyan
Wang, Yanhua Liu, Lei Yuan, Feng Zhang, Wei Zhang, Chen Rong, Dayun Huo,
Xianying Zhang, Changsi Peng,
Advanced Materials Research, 815 (2013) 501-507
43.
A Novel Method to Fabricate Hydrophobic
Surfaces Based on Candle Soot
Particles and Polydimethylsiloxane
Lei YUAN, Feng ZHANG, Wei-ping
LIU, Xiao-yong GU, Wei
ZHANG, Da-yun HUO, Xian-ying ZHANG, Yan-yan WANG and Chang-si Peng,
Advanced Materials Research Vol. 815 (2013) pp.610-615
44.
多光束激光干涉光刻图样的研究
张伟，刘维萍，顾小勇，谈春雷，彭长四，强激光与粒子束, 23(12) (2011) 3157.
45.
Focusing effect
of a graded index photonic crystal lens
C. Tan, Tapio
Niemi, Changsi Peng, Markus Pessa, Optics Communications, 284 (2011) 3140–3143
46. Ordered nanostructures written directly
by laser interference
C. Tan, C.S. Peng, J.
Pakarinen, M. Pessa, V.N. Petryakov, Y.K. Verevkin, J. Zhang, Z. Wang, S.M.
Olaizola, T. Berthou, S. Tisserand, Nanotechnology 20 (12), pp. 125303-1-5
(2009), Highlighted by IOP NanoTech Web (http://nanotechweb.org/cws/article/tech/38274) on March 19, 2009, and website of US
project InterNano (http://www.internano.org/content/view/184/158/)
(University of Massachusetts Amherst) on March 20, 2009
47. Annealing of
self-assembled InAs/GaAs quantum dots: a stabilizing effect of beryllium doping
J. Pakarinen, V. Polojärvi, A. Aho, P.
Laukkanen, C.S. Peng, A.
Schramm, A. Tukiainen, M. Pessa, App.
Phys. Lett. 94, pp. 072105-1-3 (2009)
48. An effect of As flux on GaAs/AlAs
quantum wells: A combined photoluminescence and reflection high-energy electron
diffraction study
J. Pakarinen, V. Polojärvi, P. Laukkanen, A. Tukiainen, A. Laakso, C.S. Peng, P. Tuomisto, V-M.
Korpijärvi, J. Puustinen, M. Pessa, Appl. Surface Sci. 255(5), pp2985-2988
(2008)
49. Suppression of annealing-induced In
diffusion in Be-doped GaInAsN/GaAs quantum well
J. Pakarinen, C.S. Peng, A.
Tukiainen, V.-M. Korpijärvi, J. Puustinen, M. Pessa, P. Laukkanen, J. Likonen,
E. Arola, Appl. Phys. Lett. 93,
052102-1-3 (2008)
50. Postgrowth
annealing of GaInAs/GaAs and GaInAsN/GaAs quantum well samples placed in a
proximity GaAs box: A simple method to improve the crystalline quality
J. Pakarinen, C.S. Peng,
J. Puustinen, P. Laukkanen, V.-M. Korpijärvi, A. Tukiainen, M. Pessa, Appl.
Phys. Lett. 92, 232105-1-3
(2008)
51. Line defects in two dimensional
four-beam interference patterns
C. Tan, C.S. Peng, V. N.
Petryakov, Yu. K. Verevkin, J. Zhang, Z. Wang, S. M. Olaizola, T. Berthou, S.
Tisserand and M. Pessa, New Journal of Physics 10 (2), pp.023023-1-8 (2008)
52. Influence of
Nitride and Oxide cap layers upon the annealing of 1.3-um GaInNAs / GaAs
quantum wells
H.F. Liu, C.S. Peng, J. Likonen, T.Jouhti, S. Karirinne, J. Konttinen,
M. Pessa, J. Appl. Phys.
95 (8), pp. 4102-4104 (2004)
53.
In-situ annealing
effect on the structural properties of near-surface GaInNAs/GaAs quantum wells
H.F. Liu, S, Karirinne, C.S. Peng, T. Jouhti, J.
Konttinen, M. Pessa, J. Gryst Growth 263, pp. 171-175 (2004)
54.
Annealing effects on optical and structural
properties of 1.3-um GaInNAs/GaAs quantum-well samples capped with dielectric
layers
H.F. Liu, C.S. Peng, E.-M. Pavelescu, T. Jouhti, S. Karirinne, J.
Konttinen, M. Pessa, Appl. Phys. Lett. 84, (4), pp. 478-480 (2004)
55.
Dilute nitride vertical-cavity surface-emitting
lasers
T. Jouhti, O.G. Okhotnikov, J.
Konttinen, L.A. Gomes, C.S. Peng,
S. Karirinne, E.-M. Pavelescu, M. Pessa, New Journal of Physics 5, pp. 84-1-6
(2003)
56.
Structural and
optical properties of near-surface GaInNAs / GaAs quantum wells at emission
wavelength of 1.3 µm
H.F.
Liu, C.S. Peng, E.-M. Pavelescu, T.
Jouhti, J. Konttinen, M. Valden M. Pessa, Appl. Phys. Lett. 82 (15) pp.2428-2430 (2003)
57.
Enhanced optical and
structural properties of strain-compensated 1.3-um GaInNAs / GaNAs / GaAs
quantum- well structures by insertion of strain-mediating layer
E.-M. Pavelescu, C.S. Peng, T. Jouhti, J. Konttinen, M. Dumitrescu, W. Li, M. Pessa, Solid State
Electronics 47/3 pp.507-512 (2003)
58.
Strain-Compensated GaInNAs
Structures for 1.3 um Lasers
T. Jouhti, C.S. Peng, E.-M. Pavelescu, J. Konttinen, L.A. Gomes, O.G. Okhotnikov,
M. Pessa, IEEE J. of Selected
Topics in Quantum Electronics, 8 (4), pp. 787-794, (2002)
59.
Enhanced optical performances
of strain-compensated 1.3 um GaInNAs/GaNAs/GaAs quantum-well structures
E.-M. Pavelescu, T. Jouhti, C.S. Peng, W. Li, J. Konttinen, M. Dumitrescu, P. Laukkanen, M.Pessa, J. Cryst. Growth
241, pp. 31-38 (2002)
60.
Effects of
insertion of strain-mediating layers on luminescence properties of 1.3-um GaInNAs / GaNAs / GaAs quantum-well
structures
E.-M. Pavelescu, C.S. Peng, T.
Jouhti, J. Konttinen, W. Li, M. Dumitrescu, S. Spânulescu, M.Pessa, Appl. Phys. Lett. 80 (17) pp.
3054-3056 (2002)
共同作者:
61.
Working characteristics of external
distributed feedback polymer lasers with varying waveguiding structures
Wenbin Huang, Su Shen, Donglin Pu, Guojun Wei, Yan Ye, Changsi Peng,
Linsen Chen, Journal of Physics D: Applied Physics, 48 (49) pp.495105
(2015.11.18).
62.
Polarized GaN-based
light-emitting diode with an embedded metallic/dielectric subwavelength grating
Guiju Zhang, Bing Cao, Chinhua Wang, Qin Han, Changsi Peng, Jianfeng
Wang, Ke Xu, Hui Yang, Markus Pessa, Thin Solid Films, 520 (2011)
419-423
63.
Sub-20 nm island
self-organisation stimulated by spatially periodic laser exposure in the
GaAs/InGaAs/GaAs epitaxial system
Verevkin, Yu.K., Petryakov, V.N., Gushchina,
Yu.Yu., Peng, C.S., Tan, C., Pessa, M.,
Wang, Z., Berthou T., Tisserand, S., Quantum
Electronics, 40(1), pp.73-76 (2010)
64. High-power laser interference
lithography process on photoresist: effect of fluence and polarization
M Ellan, A Rodriguez, N Perez, M Echeverria,
YK Verevkin, CS Peng, T Berthou, Z Wang, SM Olaizola, I Ayerdi, Applied
Surface Science, 255 (10), pp.5537-5541 (2009.3.1).
65. Beryllium doping of GaAs and GaAnN
studied from first principles
H.-P. Komsa, E. Arola, J. Pakarinen, C.S. Peng, T. Rantala, Phys. Rev. B
79, 115208-1-9 (2009)
66. Laser Interference Lithography for nanoscale structuring of
materials: from laboratory to industry
A.
Rodriguez, M. Echeverria, M. Ellman, I. Ayerdi, J. Savall, Y.K. Verekin, C.S.
Peng, T. Berthou, Z. Wang, S.M. Olaizola, Microelectronics
Engineering, 86(4-6),
pp937-940 (2009)
67. High-power laser interference
lithography process on photoresist: effect of laser fluence and polarization
M. Ellman, A. Rodriquez, N. Perez, M. Echeverria, Y.K. Verevkin, C.S.
Peng, T. Berthou, Z. Wang, S.M. Olaizola, I. Ayerdi, Appl. Surface Sci.
255(10), pp.5537-5541 (2008)
68. Electronic
and structural properties of GaAs(100)(2x4) and InAs(100)(2x4) surfaces studied
by core-level photoemission and scanning tunneling microscopy
P. Laukkanen, M. Kuzmin, R.E. Perälä,
M. Ahola, S. Mattila, I. J. Väyrynen, J. Sadowski, J. Konttinen, T. Jouhti, C.S.
Peng, M. Saarinen, M. Pessa, Phys.
Rev. B 72, pp.045321-1-9 (2005)
69.
Long-wavelength Nitride Lasers on GaAs
M. Pessa, C.S. Peng, T. Jouhti,
E.-M. Pavelescu, W. Li, S. Karirinne, H.F. Liu, O.G. Okhotnikov, Microelectronics
Engineering 69, pp. 195-207 (2003)
70.
Effects of
hydrostatic pressure on Raman scattering in Ge quantum dot superlattices
L.
Qin, Z.X. Shen, K.L. Teo, C.S. Peng, J.M. Zhou, C.H. Tung, S.H. Tang, Thin Solid Films 424 (1), pp. 23-27
(2003)
71.
Crosshatching on a SiGe film grown on a
Si(001) substrate studied by Raman mapping and atomic force microscopy
H. Chen, Y. K. Li, C.S. Peng,
H. F. Liu, Y. L. Liu, Q. Huang, and J. M. Zhou, Phys.
Rev. B 65 (23) pp. 233303-1-4 (2002)
72. Si上Ge薄膜特性研究
李科，杨茹，李国辉，彭长四，李永康，北京师范大学学报: 自然科学版，38(2) pp.211-213 (2002)
73.
Low-thereshold-current 1.32-um
GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy
W. Li, T. Jouhti, C.S. Peng, J. Konttinen, P. Laukkanen, E.-M. PAvelescu, M. Dumitrescu,
M. Pessa, Appl. Phys. Lett. 79
(21) pp. 3386-3388 (2001)
74.
Raman scattering of Ge/Si dot
superlattices under hydrostatic pressure
L. Qin, K. L. Teo, Z. X. Shen, C.S. Peng, and J. M. Zhou, Phys.
Rev. B 64 (7) pp. 075312-1-4 (2001)
75.
Evolution of mosaic structure in Si0.7Ge0.3
epilayers grown on Si(001) substrates
J. H. Li, C.S. Peng,
Z. H. Mai, J. M. Zhou, Q. Huang, and D. Y. Dai J. Appl. Phys. 86 (3) pp.
1292-1297 (1999)
76.
Confinement and Electron-Phonon
Interactions of the E1 Exciton in Self-organized Ge Quantum Dots
S.H.Kwok, P.Y.Yu, C.S. Peng, J.M.Zhou, C.H.Tung, Y.H.Zhang Phys. Rev. B 59 (7) pp. 4980-4984 (1999)
77.
Critical Ge concentration for
2xn reconstruction appearing on GeSi covered Si(001)
L.W.Guo, Q.Huang, Y.K.Li, S.L.Ma, C.S. Peng and J.M.Zhou, Surf. Sci. 406 pp. L592-L596 (1998)
78.
Relaxed Si0.7Ge0.3
layers grown on low-temperature Si buffer with low threading dislocation
density
J.H.Li, C.S.
Peng, Y.Wu, D.Y.Dai, J.M.Zhou, Z.H.Mai, Appl. Phys. Lett. 71 pp.
3132-3134 (1997)
79. Investigation of annealing and ion
implantation in GeSi/Si superlattice
JF Xiao, SL Feng, CS Peng,
Journal of Infrared and Millimeter Waves 16 (5), 321-324 (1997)
80.
GeSi/Si
应变结构内应力纵向分布
肖剑飞，封松林，彭长四，红外与毫米波学报 ，16
(5), 325-329 (1997)
81.
Second-harmonic generation
from (Si5Ge5)100 superlattices with on applied external
electric field
X.H. Zhang, Z.H.Chen, L.Z.Xuan, C.S. Peng, J.M.Zhou, S.H.Pan, G.Z.Yang, Appl. Phys. Lett. 71 pp. 3357-3359
(1997)
82.
Conversion of Step
Configuration Induced by Strain in Si1-xGex Layer
Deposited on Vicinal Si(001) Surface
J.M.Zhou, L.W.Guo, Q.Cui, C.S. Peng, and
Q.Huang, Appl. Phys. Lett. 68 pp.628-630 (1996)
学术会议:
大会报告/特邀报告:
83. In-situ
laser interference modulated molecular beam epitaxial growth of quantum dots
Changsi Peng, Zhenwu Shi, Siyi Zhuang, Qiuyue Qi, Biao Geng, Zequn Zhu, Gaojun
Zhang, Zhaoxiang Han, International Conference on Optics, Electronics and
Optoelectronics (ICOEO 2021), Nov. 5-7, Xi’an, China.
84. 激光图形化诱导纳米结构阵列外延/光刻同步解决方案
Laser Patterning-Induced Nanostructure Array Epitaxy / Lithography
Synchronization Solution
彭长四，第十二届中国国际纳米技术产业博览会（CHINANO 2021），苏州，2021年10月27-29日。
85. 原位、实时激光图形化诱导分子束外延纳米结构阵列
彭长四，石震武，庄思怡，耿彪，祁秋月，朱泽群，张高俊，韩照祥, 第十四届全国分子束外延学术会议，溧阳，2021年10月19-22日。
86. 激光图形化诱导纳米结构外延制备
彭长四，2021新材料国际发展趋势高层论坛（IFAM2021），宁波，2021年10月16-18日。
87. Laser
interference patterning induced quantum structure arrays by molecular beam
epitaxy
Changsi Peng, Zhenwu Shi, Siyi Zhuang, Biao Geng, Qiuyue Qi, Zequn Zhu, Gaojun
Zhang, Zhaoxiang Han, Photonics Asia 2021, Oct. 10-12, Nantong, China
88. 激光图形化诱导纳米结构阵列外延制备
彭长四，石震武，庄思怡，耿彪，祁秋月，朱泽群，张高俊，韩照祥，2021年中国光学学会学术大会，深圳，2021年9月18-20日。
89. 原位激光干涉图形化诱导分子束外延量子点定位生长
彭长四，石震武，耿彪，庄思怡，祁秋月，朱泽群，张高俊，韩照祥，第八届全国光电材料、器件及发展趋势研讨会，银川，2021年7月28-31日。
90. 激光图形化诱导纳米结构阵列外延制备
彭长四，2021光电子材料与器件发展研讨会，北京，2021年7月24-26日。
91. 激光图形化诱导纳米结构阵列外延制备
彭长四，石震武，耿彪，庄思怡，祁秋月，朱泽群，张高俊，韩照祥，2021集成光子学大会，成都，2021年6月18-20日。
92.
Epitaxial
growth of nanostructure arrays induced by laser patterning
Changsi Peng, Zhenwu Shi, Biao Geng, Siyi Zhuang, Qiuyue Qi, Zequn Zhu, Gaojun
Zhang, Zhaoxiang Han, 10th International Symposium on Advanced Optical
Manufacturing and Testing Technology (AOMATT 2021), Jun. 14-17, Chengdu, China.
93.
Laser
patterning induced quantum structure arrays by molecular beam epitaxy
Changsi Peng, Zhenwu Shi, Siyi Zhuang, Biao Geng, Qiuyue Qi, Zequn Zhu, Gaojun
Zhang, Zhaoxiang, Han, 2021 International Conference on Laser, Optics and
Optoelectronic Technology (LOPET 2021), May 28-30, Xi’an, China.
94.
光诱导图形化外延纳米结构
彭长四，2020第七届先进功能材料研究与应用新进展研讨会，桂林，2020年12月18-20日。
95.
光诱导外延质量的图形化纳米结构阵列
彭长四，石震武，庄思怡，耿彪，祁秋月，开能源材料与纳米技术桂林会议，桂林，2020年10月30日-11月1日。
96.
强激光干涉诱导晶圆外延级无缺陷纳米结构阵列制备
彭长四，石震武，庄思怡，耿彪，祁秋月，第二十四届全国激光学术会议暨第十五届全国激光技术与光电子学学术会议，上海，2020年10月17-20日。
97.
光场图形化诱导纳米结构阵列外延制备
彭长四，石震武，庄思怡，耿彪，祁秋月，2020第七届全国光电材料、器件及发展趋势研讨会，西宁，2020年8月14-16日。
98.
激光干涉诱导分子束外延量子结构阵列的制备
彭长四，2019第二届光电材料与器件战略论坛，昆明，2019年11月22-24日。
99.
Laser
interference patterned growth of quantum structure arrays by molecular beam
epitaxy
Changsi Peng, 2019 Global Summit on Material Science &Engineering, Nov.
14-15, 2019, Osaka, Japan.
100. 激光干涉诱导纳米结构阵列生长和刻蚀
彭长四，石震武，杨琳韵，杨新宁，缪力力，庄思怡，第十三届全国分子术外延学术会议，烟台，2019年8月14-17日。
101. Defect-free
epitaxial quantum structure arrays
Changsi Peng, The 17th IEEE International Conference on IC Design and Technology
(ICICDT 2019), June 17-19, Suzhou, China.
102. Laser
interference modulated MBE growth of defect-free site-controlled quantum dot
arrays
Changsi Peng, Zhenwu Shi, Linyun Yang, Xinning Yang, Lili Miu, Siyi Zhuang, 《Nature》Conference:
Emergent Materials and Devices, April 12-14, 2019, Chengdu, China.
103. 原位激光干涉图形化自组装：一种量子结构阵列的新的制备
彭长四，2018光电材料与器件战略论坛，广州，2018年11月23-25日。
104.
In-situ
laser interference modulated MBE growth of site-controlled quantum dots
Changsi Peng,
Zhenwu Shi, Wei Zhang, Dayun Huo, Changwei Deng, Chen Chen, Linyun Yang, Lili
Miu, and Xinning Yang, 20th International Conference on Molecular Beam Epitaxy
(ICMBE 2018), September 2-7, 2018, Shanghai, China.
105. High resolution nano-lithography
C.S. Peng, Nanotech Suzhou
2008, November7-8, 2008, Suzhou, China.
106. Photonics studies on dilute nitrides at long wavelength for
telecommunication
C.S. Peng and M. Pessa
Asia-Pacific Optical Communication 2007, November 1-5, 2007, Wuhan, China.
Proc. SPIE 6782, 67821M1-12 (2007).
第一作者:
107. Fast, high efficiency and cost-effective laser nano-lithography
C.S. Peng, C. Tan,
Proc. SPIE 7657, 7657-108 (2010), 5th SPIE International Symposium on Advanced Optical Manufacturing and
Testing Technologies (AOMATT 2010), 26-29 April 2010, Dalian,
China.
108.
High resolution nano-patterns
C.S. Peng, C. Tan, V. N. Petryakov, Yu. K. Verevkin, Z. Wang, S.
M. Olaizola, T. Berthou, and M. Pessa, IVC-17/ICSS-13 and ICN+T2007 Congress,
2-6 July, 2007, Stockholm, Sweden,
NSP3-87: NS - Nanotechnology & Fabrication, 4 July, 2007
109. High-gain new InGaAsN heterostructure
C.S. Peng, J. Konttinen, T.
Jouhti, and M. Pessa
Photonics Europe 2006, Strasbourg, France April 3-6, 2006.
Proc. SPIE 6184, 618409 (2006)
110. High-gain InGaAsN materials
C.S. Peng, J. Konttinen, T.
Jouhti, and M. Pessa
Asia-Pacific Optical Communication 2005, Shanghai, China, Nov. 6-10, 2005.
Proc. SPIE 6020, 60200H (2005)
111. High
performance GaAs-based InGaAsN and InGaAs Lasers
C.S. Peng, T. Jouhti, J. Konttinen, and M. Pessa, 13th
European MBE Workshop, Grindelwald, Swtzerland, March 7-9, 2005
112. InGaAsN/GaAs lasers: high performance and long lifetime
C.S. Peng, J. Konttinen, T.
Jouhti, and M. Pessa
Photonics West 2005, Novel
In-Plane Semiconductor Lasers IV, San Jose,
USA, Jan. 22-27, 2005,
Proc. SPIE Int. Soc. Opt. Eng. 5738, 204 (2005)
113.
Single Mode GaInNAs/GaAs Lasers
C.S. Peng, J. Konttinen, T. Jouhti, M. Pessa, European Semiconductor Laser Workshop 2004, Särö, Sweden, Sep.
2-4, 2004
114.
Mechanism
of Photoluminescence Blue Shift in InGaAsN/GaAs Quantum Wells during Annealing
C.S. Peng, H.F. Liu, J. Konttinen, M. Pessa, MBE 2004 Conf.,
Edinburgh, UK, Sep. 22-27, 2004.
115.
High Performance GaInNAs/GaAs Lasers
C.S. Peng, J. Konttinen, T. Jouhti, M. Pessa, MBE 2004 Conf.,
Edinburgh, UK, Sep. 22-27, 2004.
116.
Low Threshold, High Power and Long Life Time
GaInNAs/GaAs Lasers
C.S. Peng, N. Laine, J. Konttinen, T. Jouhti, M. Pessa, EMRS 2004
Conf., Strasbourg, France, May 24-28, 2004, IEE Proc.,
Optoelectron. 151, pp. 426-428
(2004)
117.
N2-Incorporation-Induced Blue Shift in
InGaAsN/GaAs Quantum Well during Annealing
C.S. Peng, H.F. Liu, J. Konttinen, M. Pessa, EMRS 2004
Conf., Strasbourg, France, May 24-28, 2004, IEE Proc.,
Optoelectron. 151, pp. 320-322
(2004)
118.
Blue Shift in InGaAsN/GaAs Quantum Wells with
Different Width
C.S. Peng, J. Konttinen, H.F. Liu, M. Pessa, EMRS 2004
Conf., Strasbourg, France, May 24-28, 2004, IEE Proc.,
Optoelectron. 151, pp. 317-319
(2004)
119. Thermal annealing effect on InGaAsN/GaAs lasers
Changsi Peng, Janne Konttinen,
Suvi Karirinne, Tomi Jouhti, Hongfei Liu, and Markus Pessa
Photonics West 2004, San Jose, USA,
26-29 January, 2004. Proc. SPIE Int. Soc. Opt. Eng. 5365, pp. 40-45 (2004).
120. InGaAsN/GaAs
lasers performance on thermal annealing
C.S. Peng, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa,
20th Nordic Semiconductor Meeting, Tampere, Finland, 25-27 August, 2003
121. Thermal
annealing effect on InGaAsN/GaAs lasers
C.S. Peng, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa, International
Workshop on GaAs based lasers for the 1.3 - 1.5 µm wavelength range (Wroclaw, Poland, 24-26 April 2003)
122.
Reveal the Surface Defect Pits of AlGaAs Related
Epitaxial Layer by Wet Oxidation
C.S. Peng, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa, E-MRS 2003 Meeting, Strasbourg, France,
10-13 June, 2003.
123.
Thermal annealing effect on InGaAsN/GaAs lasers
C.S. Peng, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa, Physics Days 2003, The XXXVII Annual
Conf. of the Finnish Phys. Soc., 1.3, 78.55, p. 12, Helsinki Finland, 20-22
March, 2003
124.
Interdiffusion
of GaInNAs/GaAs laser structures
C.S. Peng, H.F. Liu, T. Jouhti, E.-M. Pavelescu, J. Konttinen, M.
Pessa, International Workshop on Physics and Technology of Dilute Nitrides for
Optical Communications, Istanbul, Turkey, 8-12 Sept., 2002. IEE Proc.
Optoelectronics, 150 (1) pp.36-39 (2003)
125.
In-Plan Self-Organized
Two-Dimensional-Ordered GeSi Islands Grown on Si (001) by Molecular Beam
Epitaxy
C.S. Peng, Y.K.
Li, and J.M. Zhou, MBE XII Conf., San Fransisco, USA, Sep. 2002. Conf. proc. IEEE
Catalog #02EX607, paper number MB2.6, pp. 55-56 (2002)
126.
A study and control of lattice
sites of N and Ga / In / N interdiffusion in dilute nitride quantum wells
C.S. Peng, W. Li, T.Jouhti, E.-M. Pavelescu, M. Pessa, MBE XII Conf., San Fransisco, USA,
Sep. 2002. Conf. proc. IEEE Catalog #02EX607, paper number ThA1.2, pp. 267-268
(2002)
127.
Reveal the Threading
Dislocation Pits of AlGaAs Related Epitaxial Layer by Wet Oxidation
C.S. Peng, T. Jouhti, J. Konttinen, M. Pessa, MBE XII Conf., San Fransisco, USA, Sep. 2002. Conf. proc. IEEE
Catalog #02EX607, paper #TuP 28, pp. 179-180 (2002)
128.
1.3 um InGaAsN/GaAs Edge
Emitting and Vertical Cavity Surface Emitting Lasers grown by molecular beam
epitaxy
C.S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, MBE XII Conf., San Fransisco, USA,
Sep. 2002. Conf. proc. IEEE Catalog Number 02EX607, paper TuA1.3, pp. 63-64
(2002)
129.
A new method to suppress the
In diffusion of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
C.S. Peng, E.-M. Pavelescu, T. Jouhti, J. Konttinen, W. Li, M. Pessa, E-MRS 2002 Spring Meeting, Strasbourg,
France, Jun. 2002
130.
Study of Ge0.96Si0.04
epilayers grown on Si (001)at high temperature
C.S. Peng,
H.Kawanami, Y.K.Li, G.H.Li, Q.Huang, and J.M.Zhou, 11th
Intern. Conf. MBE, Sep. 2000 China
131.
The formation of dislocations in the interface
of GeSi/low-temperature Si buffer grown on Si (001)
C.S. Peng, Y.K.Li,
Q.Huang, and J.M.Zhou 11th Intern.
Conf. MBE, Sep. 2000 China
132.
The mechanism of the relaxation of GeSi on
low-temperature Si
C.S. Peng, Q.Huang, J.M.Zhou, 5th National MBE Conf., Jun.
1999 China
133.
Relaxed GeSi alloy grown on
low-temperature buffers by MBE
C.S. Peng, Q.Huang, J.M.Zhou, Y.H.Zhang, C.H.Tung, T.T.Sheng, J.Wang,
SPIE’s Photonics West’99, Jan. 1999 USA, Proceedings-of-the-SPIE
--The-International-Society-for-Optical-Engineering. vol.3630, 1999, p.231-6
134.
The strain relaxation of GeSi grown on
low-temperature Si
C.S. Peng, H.Chen, Z.Y.Zhao, J.H.Li, D.Y.Dai,
Q.Huang, J.M.Zhou, Y.H.Zhang, T.T.Sheng, C.H.Tung, 5th
China-Japan Symp. on Thin Film, pp60, Nov. 1998 China
135.
The strain relaxation of GeSi alloy with
low dislocation density grown on low-temperature Si buffers
C.S. Peng, Q.Huang, J.M.Zhou, Y.H.Zhang,
C.H.Tung, T.T.Sheng, J.Wang, 10th Intern. Conf. MBE, Sep.
1998 France
136.
The Behavior of Sb-dopant in Silicon
C.S. Peng, L.W.Guo, Q.Huang, J.M.Zhou, 4th National MBE Conf.
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137.
Novel Ge self-organized quantum dots in Si
C.S. Peng, Q.Huang, Y.H.Zhang, W.Q.Cheng, T.T.Sheng, C.H.Tung, J.M.Zhou, 8th
Intern. Conf. Narrow-gap Semicond. pp440, Apr. 1997,
China, Proceedings of the Eighth International Conference on Narrow Gap
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138.
In-situ laser nano-holed patterning of
GaAs surface by the wetting of InAs layer
Qiuyue Qi, Linyun Yang, Wei Zhang, Siyi Zhuang, Biao Geng, Xinning Yang,
Lili Miao， Zhenwu Shi, Changsi Peng ,10th Applied
Optics and Photonics China Beijing, China, 20-22 June, (2021). Proc. SPIE
12060, AOPC 2021: Advanced Laser Technology and Applications, 120601T (24 Nov.
2021); https://doi.org/10.1117/12.2607039.
140. Observation of using laser direct writing to fabricate nano-grooves
on GaAs substrate
Siyi Zhuang, Wei Zhang, Xinning Yang, Lili Miao, Zhenwu Shi, Changsi Peng, Photonics Asia - Advanced Laser
Processing and Manufacturing IV, Proc. SPIE 11546, 115460P, Beijing, China,
11-13 Oct (2020) https://doi.org/10.1117/12.2574968
141.
Superhydrophobic Surface Modified by
Sol-gel Silica Nanoparticle coating
Xiaoxing Zhang, Yanyan Wang, Liang Gu, Zhiyong Xu, Yanhua Liu, Changsi Peng, the 8th Spring
World Congress on Engineering and Technology (SCET 2019), Xiamen, China, 22-24 April
, 2019. Materials Science Forum, 2019, 960: 155-160.
142.
Novel tubular graphene synthesized via
chemical vapor deposition Process
Ming Yang, Yanyan Wang, Lei Dong, Zhekun Wu, Yanhua Liu and Changsi Peng, 2019 3rd
International Conference on Material Engineering and Advanced
Manufacturing Technology (MEAMT 2019), Shanghai, China, 26-28 April, 2019.
IOP Conference Series: Materials Science And Engineering (2020), https://doi.org/10.1088/1757-899X/715/1/012003.
143.
Sensing Properties of 3D Graphene
Nanotubes (GNT)@ZnO at Room Temperature
Lei Dong, Yanyan Wang*, Zhekun Wu, Weixiao Liu, Shuyang Ying, Manman Huang, Changsi Peng, 2019 5th
International Conference on Advances in Energy Resources and Environment Engineering
(ICAESEE2019), Chongqing, China, 06-08 December, 2019.
144.
Preparation of copper nanowires conductive
films by using cuprous oxide nanowire as template
Weixiao Liu, Yanyan Wang, Lei Dong, Manman Huang, Shuyang Ying, Changsi Peng, 2019 5th
International Conference on Advances in Energy Resources and Environment
Engineering (ICAESEE2019), Chongqing, China, 06-08 December, 2019.
145.
Realization of periodic InAs QDs by
in-situ four-beam laser-interference irradiation on the wetting layer
L Yang, X Yang, L Miao, W Zhang, D Huo, Z Shi, Changsi Peng, Proc. SPIE 10814, Optoelectronic Devices and
Integration VII, 108141M (5 November 2018); doi:10.1117/12.2513815.
146. Surface modification on InAs wetting
layer by in-situ pulsed laser and the effects on quantum dot growth
Chen Chen, Linyun Yang, Changwei Deng,
Xinning Yang, Lili Miao, Zhenwu Shi, Changsi
Peng, Sixth International Conference on Optical and Photonic
Engineering (icOPEN 2018), 10827, pp.108272A (2018.7.24).
147. Construction of superhydrophobic
surfaces by sol-gel techniques
Gu L, Wang Y, Xu C, Zhang F, Wu Z,
Zhang X, Shi Z, Peng C.S.,
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), IEEE,
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148. Surface modification on GaAs by in-situ
pulsed UV laser
Xiaoxiang Guo, Dayun Huo, Wei Zhang,
Chao Xu, Changwei Deng, Changsi Peng,
8th International Symposium on Advanced Optical Manufacturing and Testing
Technologies: Optoelectronic Materials and Devices, 9686, pp.96860P
(2016.10.25)
149. Fabrication of superhydrophobic
soot-like surface
Xu C, Shi Z, Wu Z, Zhang F, Gu L, Wang
Y, Zhou X, Peng C.S.,
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), IEEE,
2016: 400-403.
150. Rose petal mimic surface by TiO2
sol-gel process
Wu Z, Shi Z, Xu C, Zhang F, Gu L, Wang
Y, Zhou X, Peng C.S., Manipulation,
Manufacturing and Measurement on the Nanoscale (3M-NANO), IEEE, 2016: 221-224
151. Surface modification on GaAs by in-situ
pulsed UV laser
Xiaoxiang GUO, Dayun HUO, Wei ZHANG,
Chao XU, Changwei Deng, Changsi Peng,
Proc. of SPIE Vol. 9686, 96860P, AOMATT 2016: Optoelectronic Materials and
Devices, 26-29, April, 2016, Suzhou, China
152. Superhydrophobic surface transferred
from Berberis thunbergii leaf using one step replication
Feng Zhang*, Yingjie Jiang, Zhuhui Wu,
Jiajia Song, Chengyun Xu, Zhenwu Shi, Changsi
Peng, 5th 3M-NANO
(International Conference on
Manipulation, Manufacturing and Measurement on the Nanoscale) 5-9 October
2015, Changchun, China
153. Direct metal transfer printing on
flexible substrate for fabricating optics functional devices
Yingjie JIANG, Xiaohong ZHOU*, Feng
ZHANG, Zhenwu SHI, Linsen CHEN, Changsi
Peng, International Workshop on Thin-films for
Electronics,Electro-Optics,Energy and Sensors 2015, 4-6 July, 2015, Suzhou,
China, Proc. SPIE 9667 (ISSN: 0277-786X), 966707 (November 6, 2015), doi:10.1117/12.2199655,
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154. Fabrication of super-hydrophobic
duo-structures
X. Y. Zhang, F. Zhang, Y. J. Jiang, Y.
Y. Wang, Z. W. Shi, C.S. Peng,
Proc. of SPIE Vol. 9522 pp.952233-1, Selected Papers from Conferences of the
Photoelectronic Technology Committee of the Chinese Society of Astronautics
2014, Part II, 952233 (April 13, 2015), doi:10.1117/12.2184406.
155.
Fabrication of
micro- and nano- structures for antireflection by chemical etching method
C. Rong, X.-Y. Gu, W.-P. Liu, W.
Zhang, F. Zhang, L. Yuan, Y.Y. Wang and C.S.
Peng, Proc. IEEE
978-1-4799-1213-1/13 (2013), pp.368-371. 3M-NANO (International
Conference on Manipulation, Manufacturing and Measurement on the Nanoscale) 26-30 August
2013, Suzhou, China,
DOI: 10.1109/3M-NANO.2013.6737452.
156.
Superhydrophobic
micro-nano structures transferred from Berberis Thunbergii leaves
F. Zhang, X.Y. Zhang, L. Yuan, W.Zhang,
D.Y. Huo,Y.Y. Wang, C.S. Peng, Proc. IEEE
978-1-4799-1213-1/13 (2013), pp.60-63. 3M-NANO (International Conference on Manipulation, Manufacturing and Measurement
on the Nanoscale) 26-30 August 2013, Suzhou, China, DOI: 10.1109/3M-NANO.2013.6737380.
157. Hydrophobic surface
fabricated by laser interference lithography
W.
P. Liu, X. Y. Gu, W. Zhang, F. Zhang, L. Yuan, Y.Y. Wang and C.S. Peng, Proc. IEEE CFP123MN-CDR pp.411-415 (2012). 3M-NANO (International Conference on Manipulation, Manufacturing and Measurement
on the Nanoscale) 2012, Xi’an, China, Aug.29-Sep.01, DOI: 10.1109/3M-NANO.2012.6472964.
158. Periodic
Sub-wavelength
Surface-relief Structures for Anti-reflection
X.-Y. Gu, W.-P. Liu, W. Zhang, F. Zhang, L. Yuan, Y.Y. Wang and C.S. Peng, Proc. IEEE CFP123MN-CDR pp.351-354 (2012). 3M-NANO
(International Conference on
Manipulation, Manufacturing and Measurement on the Nanoscale) 2012, Xi’an,
China, Aug.29-Sep.01, DOI:
10.1109/3M-NANO.2012.6472953.
159.
Fabricate
planar photonic crystal gradient index lens by laser interference lithography
C. Tan, C.S. Peng, V.N.
Petryakov, Yu. K. Verevkin, J. Zhang, Z. Wang, S.M. Olaizola, T. Berthou, S.
Tisserand, IEEE
Nano 2009, Genoa, Italy, 26 - 30 July, 2009, Proceeding
of IEEE Nanotechnology, pp.450-453 (2009)
160. The effect of annealing on highly
be-doped INGAASN/GAAS single quantum wells
J. Pakarinen, C.S. Peng,
V. Polojärvi, P. Laukkanen, A. Tukiainen, V.-M. Korpijärvi, J. Puustinen, M.
Pessa, Physics Days 2008, Turku, Finland, 27 - 28 March, 2008, Proceedings of
the XLII Annual Conference of the Finnish Physical Society, p. 112, ISBN
978-951-29-3515-4
161. The effect of
annealing on highly be-doped INGAASN/GAAS single quantum wells
J. Pakarinen, C.S. Peng, V. Polojärvi, P. Laukkanen, A. Tukiainen, V.-M.
Korpijärvi, J. Puustinen, M. Pessa, Physics Days 2008, Turku, Finland, March 27
- 29, 2008
162.
Line defects induced by asymmetric four-beam
interference
C. Tan, C.S.
Peng, V. N. Petryakov, Yu. K. Verevkin, J. Zhang, Z. Wang, S. M.
Olaizola, T. Berthou, S. Tisserand and M. Pessa, Russian-Finnish Scientific
Conference, 12.-13.9.2007, Helsinki
163.
Thermal annealing effect on 1.3 um GaInNAs/GaAs
quantum well structures capped with dielectric films
H.F. Liu, C.S. Peng, S. Karirinne, J. Konttinen, T. Jouhti, M. Pessa, EMRS 2004
Conf., Strasbourg, France, May 24-28, 2004, IEE Proc.,
Optoelectron. 151, pp. 267-270
(2004)
164. 1.28 um
GaInNAs VCSELs
T. Jouhti, O.G. Okhotnikov, J.
Konttinen, L.A. Gomes, S. Karirinne, C.S. Peng, E.-M. Pavelescu, M. Pessa, International Workshop on GaAs based lasers for the 1.3 - 1.5 µm
wavelength range (Wroclaw,
Poland, 24-26 April 2003).
165.
Diluted Nitride Edge-emitting
and Vertical-Cavity Lasers for 1.3-um Fibre-Optic Networks
T. Jouhti, C.S. Peng,
E.-M. Pavelescu, J. Konttinen, L.A. Gomes, O.G. Okhotnikov, M. Pessa, ICTON
2002, 4th Intern. Conf. on Transparent
Optical Networks, Warsaw, Poland, Apr. 2002. IEEE conf. proc. 1, pp.
140-143 (2002)
166.
Photoluminescence study of
strain-compensated GaInNAs/GaNAs/GaAs quantum-well structures grown by
molecular-beam epitaxy
E.-M. Pavelescu, T. Jouhti, M. Dumitrescu, C.S.
Peng, W. Li, J. Konttinen, V. Cimpoca, M. Pessa, CAS 2002, Int. Semiconductor Conf., Sinaia, Romania,
Oct. 2002. Conf. proc., IEEE Catalog #02TH8618, 1 pp. 177-180 (2002)
167.
Diluted Nitride Quantum Well
Structures and Lasers for 1.3-um Fiber-optic Networks
T. Jouhti, E.-M. Pavelescu, C.S. Peng, L.A. Gomes, S. Karirinne, O.G. Okhotnikov, M. Pessa, LongWave on GaAs Conference, Napa
Valley Marriott, USA, Jun. 2002
168.
Influence of low-temperature
growth on photoluminescence of 1.3-um GaInNAs/GaNAs/GaAs quantum wells
E.-M. Pavelescu, T. Jouhti, C.S. Peng, M. Dumitrescu, W. Li, J.
Konttinen, M. Pessa, International
Workshop on Physics and Technology of Dilute Nitrides for Optical
Communications, Istanbul, Turkey, Sept. 2002
169.
Microstructure Analysis and
Optical Performance of MBE-grown GaInNAs/GaAs quantum wells
T. Jouhti, S. Karirinne, J. Konttinen, E.-M. PAvelescu, C.S.
Peng,
M. Pessa, International
Workshop on Physics and Technology of Dilute Nitrides for Optical
Communications, Istanbul, Turkey, Sept. 2002
170.
1.55-um monolithic
GaInNAs/GaAs semiconductor saturable absorber
T. Jouhti, J. Konttinen, S. Karirinne, M. Guina, C.S. Peng, O.G. Okhotnikov, M. Pessa, International Workshop on Physics and Technology of Dilute Nitrides for
Optical Communications, Istanbul, Turkey, Sept. 2002
171.
Enhanced optical and
structural properties of strain-compensated 1.3-um GaInNAs / GaNAs / GaAs
quantum- well structures by insertion of strain-mediating layer
E.-M. Pavelescu, C.S. Peng, T. Jouhti, J. Konttinen, M. Dumitrescu, W. Li, M. Pessa, E-MRS 2002 Spring Meeting, Strasbourg,
France, Jun. 2002.
172.
Novel GaAs-based nitride and
antimonide long-wavelength VCSELs
T. Jouhti, C.S. Peng, E.-M. PAvelescu, J. Konttinen, L.A. Gomes, O.G. Okhotnikov,
M. Pessa, Symposium and Summer School
on: Nano and Giga Challenges in Microelectronics Research and Opportunities in
Russia, Book of Abstracts, p. 192 (2002), Moscow, Russia, Sep. 2002
173.
Photoluminescence study of
strain-compensated GaInNAs/GaAs/GaAs quantum-well structures grown by
molecular-beam epitaxy
E-M Pavelescu, T Jouhti, M Dumitrescu, CS Peng, W Li, J Kontinnen, V Cimpoca, A Pessa,
Semiconductor Conference, 2002. CAS 2002 Proceedings. IEEE 1 pp.177-180 (2002)
174.
Diluted nitride edge-emitting and
vertical-cavity lasers for 1.3um fibre-optic networks
T Jouhti, CS Peng, E-M
Pavelescu, J Konttinen, LA Gomes, O Okhotnikov, M Pessa, Transparent Optical
Networks, 2002. Proceedings of the 2002 4th International Conference on
Transparent Optical Networks, 1, pp.140-143 (2002)
175.
Group III-Arsenide-Nitride
Quantum Well Structures on GaAs for Laser Diodes Emitting at 1.3 um
T. Jouhti, C.S. Peng, E.-M. Pavelescu, W. Li, V.-T. Rangel-Kuoppa, J. Konttinen,
P. Laukkanen, M.Pessa, SPIE 4651, pp. 32-41, Photonics West 2002, San Jose, USA, Jan. 2002
176.
GaInAsN quantum well
structures and lasers on GaAs grown by solid source MBE
T. Jouhti, P. Laukkanen, C.S. Peng, J. Konttinen, E.-M. Pavelescu, W. Li, M. Pessa, European Workshop on Gallium Arsenide - Based
Lasers at 1300 nm, Lecce, Italy, Sep. 2001
共同作者:
177. .Quality Inspection
of Nanoscale Patterns Produced by Laser Interference Lithography Using Image
Analysis Techniques
Ze Ji, Jin Zhang, Santiago M Olaizola, Yury K Verevkin, Changsi Peng, Chunlei Tan, Thierry Berthou, Stéphane Tisserand, Zuobin
Wang, International Conference on
Mechatronics and Automation 2009, August 9
- 12, Changchun, China, IEEE
Proc. ICMA, pp.1835 (2009)
178. Interference lithography processes with high-power laser pulses
A. Rodriguez, M. Ellman, I. Ayerdi, N. Perez, S. M. Olaizola, J. Zhang, Z.
Ji, T. Berthou, C.S. Peng, Y. K. Verevkin, and Z. Wang
Proc. SPIE 7201, 72010R (Laser Applications in Microelectronic and
Optoelectronic Manufacturing VII),
(2009).
179. Laser interference nanolithography
Z. Wang, J. Zhang, Z. Ji, M. Packianather, Changsi Peng (C.S. Peng), C. Tan, Y.K. Verevkin, S.M. Olaizola, T. Berthou, S. Tisserand, ICMEN,
International Conference of Manufacturing Engineering, 2008
180. A High Power Laser Interference Lithography for nanoscale
structuring of materials
A. Rodriguez, M. Echeverria, M. Ellman, I. Ayerdi, J. Savall, Y.K. Verekin,
C.S.
Peng, T. Berthou, Z. Wang, S.M. Olaizola, 34th
International conference on Micro and Nano Engineering 2008, 15-18 September, Athens, Greece
181. Application of the scissors-correction scheme to the
calculation of the complex dielectric function for GaAs1-xNx Alloys with and
without Be-Related defects
E.
Arola, H.-P. Komsa, T.T. Rantala, C.S. Peng, R. Ahorinta, J. Pakarinen,
V. Polojärvi, M. Pessa, Physics Days 2008, Turku, Finland, 27 - 28 March, 2008,
Proceedings of the XLII Annual Conference of the Finnish Physical Society, p.
240, ISBN 978-951-29-3515-4
182. GaInNAs/GaAs
Quantum-Well Semiconductor Optical Amplifiers for Simultaneous Multi-wavelength
Amplification
J. Pozo, N. Vogiatzis, J. W. Lu, O.
Ansell, J. M. Rorison, P.J. Heard, P. Tuomisto, J. Konttinen, M. Saarinen, C.S.
Peng, J. Viheriälä, T. Leinonen, M. Pessa, CLEO Europe 2007, Münich,
Germany, 17-22 June, 2007
183.
Fabrication and characterization of GaInNAs/GaAs semiconductor optical
amplifiers
J.
Pozo, N. Vogiatzis, O. Ansell, P. J. Heard, J. M. Rorison, P. Tuomisto, J.
Konttinen, M. Saarinen, C. Peng, J. Viheriälä, T. Leinonen, and M. Pessa
PHASE-2007, Metz, France, March 28-30,
2007. Optical and Quantum Electronic (2007)
Proc. SPIE 6997, 69970C (Semiconductor
Lasers and Laser Dynamics III) (2008)
184. QDot and GaInNAs/GaAs Broadband
Semiconductor Optical Amplifiers for Simultaneous Multiwavelength Amplification
J M Rorison, J Pozo, N Vogiatzis, YN
Qiu, P Tuomisto, J Konttinen, M Saarinen, C Peng, J Viheriala, T
Leinonen, M Pessa, 9th International Conference on Transparent Optical
Networks, 2007. ICTON'07. IEEE proceedings 2 pp52-53 (2007.7.1)
185.
Application of
multiple-beam laser interference photolithography to the fabrication of
nanometric structures
Ainara RODRIGUEZ, Noemí PEREZ, Isabel AYERDI, Santiago M. OLAIZOLA,Yuri
VEREVKIN, Vladimir N. PETRYAKOV, Eric Ya. DAUME, Thierry BERTHOU, Changsi
Peng (C.S. Peng), Zuobin
WANG, 5ª Reunión Española de
Optoelectrónica, OPTOEL’07, 2007
186. Technological potential of laser
interference nanolithography
Z Wang, J Zhang, M Packianather, C
Peng, YK Verevkin, SM Olaizola, T Berthou, S Tisserand, Proc. International
Workshop on Micro-and Nano Production Technologies and Systems, pp.34-37
(2007.10.17)
187. System requirement analysis of laser interference
nanolithography
Zuobin Wang, Jin Zhang, Changsi Peng (C.S. Peng), Chunlei Tan, Isabel Ayerdi, Ainara
Rodríguez, Yury K.
Verevkin, Thierry Berthou, Stéphane
Tisserand and Santiago M. Olaizola, International Conference on Mechatronics and
Automation 2007, August 5 - 8, 2007, Harbin, China. Proc.
IEEE 2007 ICMA, pp.434-439 (2007)
188.
Current developments and applications using multi-beam laser interference
lithography for nanoscale structuring of materials
S.
Z. Su, Ainhara Rodríguez, Santiago M. Olaizola, C.S. Peng, C. Tan, Yury K. Verevkin,
Thierry Berthoud, and Stéphane Tisserand
Proc. SPIE 6593, 65930G (2007)
189.
Formation of 4-beam laser interference patterns for nanolithography
Jin
Zhang, Zuobin Wang, Yury K. Verevkin, Santiago M. Olaizola, Changsi Peng, Chunlei Tan, Ainara
Rodriguez, Eric Y. Daume, Thierry Berthou, Stéphane Tisserand, and Ze Ji
Proc. SPIE 6593, 65930I (2007)
190. GaInNAs/GaAs Quantum-Well Semiconductor
Optical Amplifiers for Simultaneous Multi-wavelength Amplification
J Pozo, N Vogiatzis, JW Lu, O Ansell,
JM Rorison, PJ Heard, P Tuomisto, J Konttinen, M Saarinen, C Peng, J
Viheriälä, T Leinonen, M Pessa, The European Conference on Lasers and
Electro-Optics 2007, Optical Society of America, CB-2 (2007.6.17)
192. Cross-sectional
scanning tunneling microscopy of GaAs-based semiconductor heterostructures
K. Lahtonen, M. Hirsimäki, M. Valden,
T. Hakkarainen, A. Tukiainen, T. Leinonen, L. Toikkanen, C.S. Peng, M.
Pessa, NCSS-5
Conference, Tampere, Finland, Sept. 22-25, 2004
193. Long-wavelength
Nitride Lasers on GaAs
M. Pessa, C.S. Peng, T.
Jouhti, E.-M. Pavelescu, W. Li, S. Karirinne, H.F. Liu, O.G. Okhotnikov,
special MEE volume by Elsevier, Moscow NGCM Meeting Proceedings (2003), Microelectron. Eng. 69,
195-207 (2003)
194.
Towards high-performance
nitride lasers at 1.3 um and beyond
M. Pessa, C.S. Peng, T.Jouhti, E.-M. PAvelescu, W. Li, S. Karirinne, H. Liu,
O.Okhotnikov, International Workshop on
Physics and Technology of Dilute Nitrides for Optical Communications,
Istanbul, Turkey, Sept. 2002. IEE Proc. Optoelectronics 150 (1), pp. 36-39 (2003)
195.
High performance 1.32 um
GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy
W. Li, C.S. Peng, T. Jouhti, J. Konttinen, E.-M. Pavelescu, M. Suominen, M.
Dumitrescu, M. Pessa, SPIE 4651, pp. 101-106, Photonics West 2002, San Jose, USA, Jan. 2002, Proceedings-of-the-SPIE-The-International-Society-for-Optical-Engineering.
2002, 4651: 101-6
196.
High performance 1320 nm
GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy
W. Li, T. Jouhti, C.S. Peng, J. Konttinen, E.-M. Pavelescu, M. Dumitrescu, M. Pessa,
IPRM 2002, 14th Int. Conf. on Indium
Phosphide and Related Materials, Stockholm, Sweden, May 2002. Conf.
Proc. IEEE Catalog Number: 02CH37307, pp. 23-26 (2002)
197.
High performance 1.32um GaInNAs/GaAs
single-quantum-well lasers grown by molecular beam epitaxy
Wei Li, J Konttinen, Chang Si Peng, T Jouhti, E-M Pavelescu, M Suominen,
M Pessa, Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th,
IEEE 2002, pp.23-26
198.
The Growth of Relaxed GeSi Alloy Epilayers
with Low Dislocation Density
Z.Y.Zhao, C.S. Peng, C.H.Tung, T.T.Sheng, Q.Huang, J.M.Zhou, 4th
National MBE Conf. pp83, Sep. 1997, China
199.
The Abnormal Optical Transition from Ge
Self-organized Quantum Dots
J.M.Zhou, C.S. Peng, Q.Huang, Y.H.Zhang, W.Q.Cheng, 4th
National MBE Conf. pp18, Sep. 1997 China
200.
Conversion of Step Configuration Induced
by Strain in Si1-xGex or Ge Layer Deposited on Vicinal
Si(001) Surface
J.M.Zhou, L.W.Guo, Q.Cui, C.S. Peng, Q.Huang, 4th
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